Product Datasheet Search Results:
4 Pages, 76 KB, Original- 2SK2876-01MR
- Fuji Electric
- 2SK2876-01MR
Product Details Search Results:
Fujielectric.co.jp/2SK2876-01MR
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"197 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tr...
1509 Bytes - 05:27:49, 27 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2876-01MR.pdf | 0.07 | 1 | Request |
