Product Datasheet Search Results:
9 Pages, 90 KB, Original- 2SK2796L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
11 Pages, 110 KB, Original- 2SK2796L-E
- Renesas Electronics
- 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK2796L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1481 Bytes - 13:41:10, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2762-01L.pdf | 0.08 | 1 | Request | |
| 2SK2764-01R.pdf | 0.07 | 1 | Request | |
| 2SK2755-01.pdf | 0.07 | 1 | Request | |
| 2SK2765-01.pdf | 0.07 | 1 | Request | |
| 2SK2767-01.pdf | 0.12 | 1 | Request | |
| 2SK2763-01.pdf | 0.07 | 1 | Request | |
| 2SK2768-01L.pdf | 0.13 | 1 | Request | |
| 2SK2754-01L.pdf | 0.31 | 1 | Request | |
| 2SK2762-01S.pdf | 0.08 | 1 | Request | |
| 2SK2768-01S.pdf | 0.13 | 1 | Request | |
| 2SK2760-01R.pdf | 0.07 | 1 | Request | |
| 2SK2758-01S.pdf | 0.08 | 1 | Request |
