Datasheet.Directory

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"100","I(DSS) Min. (A)":"1.0m","@(VDS) (V) (Test Condition)":"20","V(BR)DSS (V)":"160","g(fs) Min. (S) Trans. conduct.":"0.6","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.0","I(D) Abs. Drain Current (A)":"8.0","Package":"TO-3","Military":"N","g(fs) Max, (S) Trans. conduct,":"0.9","r(DS)on Max. (Ohms)":"1.0"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"120 V","Transistor ...

{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"N","Drain-Source On-Res":"0.35(ohm)","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.3(W)","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TPS","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SING...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3 A","Mounting":"Surface Mount","Rad Hardened":"No","Pin Count":"2 +Tab","Power Dissipation":"20 W","Operating Temp Range":"-55C to 150C","Package Type":"New PW-Mold","Type":"Power MOSFET","Drain-Source On-Res":"0.35 ohm","Number of Elements":"1","Drain-Source On-Volt":"100 V"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"2 +Tab","Power Dissipation":"20 W","Operating Temp Range":"-55C to 150C","Package Type":"PW-Mold","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.35 ohm","Number of Elements":"1"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"POWERMOLD, DPAK-3","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...