Product Details Search Results:
Toshiba.co.jp/2SK1489
{"Category":"MOSFET","Maximum Drain Source Voltage":"1000 V","Typical Rise Time":"100 ns","Description":"Value","Maximum Continuous Drain Current":"12 A","Package":"3TO-3PL","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1000@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"150 ns"}...
1206 Bytes - 07:49:47, 25 December 2024
Toshiba.co.jp/2SK1489(Q)
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Drain-Source On-Volt":"1000(V)","Pin Count":"3 +Tab","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PL","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"1(ohm)","Number of Elements":"1"}...
1463 Bytes - 07:49:47, 25 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1489.pdf | 0.38 | 1 | Request |
