Product Datasheet Search Results:
11 Pages, 61 KB, Original- 2SK1402A
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
7 Pages, 77 KB, Original- 2SK1402A-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
11 Pages, 61 KB, Original- 2SK1402A
- Renesas Electronics
- 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
9 Pages, 101 KB, Original- 2SK1402A(E)
- Renesas Technology
- Trans MOSFET N-CH Si 650V 4A 3-Pin(3+Tab) TO-220AB
9 Pages, 101 KB, Original- 2SK1402A-E
- Renesas Electronics
- 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Renesas.com/2SK1402A
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","Transist...
1448 Bytes - 05:23:09, 05 January 2025
Renesas.com/2SK1402A(E)
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4(A)","Mounting":"Through Hole","Drain-Source On-Volt":"650(V)","Power Dissipation":"50(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1464 Bytes - 05:23:09, 05 January 2025
Renesas.com/2SK1402A-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1503 Bytes - 05:23:09, 05 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1489.pdf | 0.38 | 1 | Request |
