Product Datasheet Search Results:
11 Pages, 72 KB, Original- 2SK1400A
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
7 Pages, 78 KB, Original- 2SK1400A-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
11 Pages, 62 KB, Original- 2SK1400A
- Renesas Electronics
- 7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
7 Pages, 90 KB, Original- 2SK1400A-E
- Renesas Electronics
- 7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Renesas.com/2SK1400A
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"350 V","Trans...
1451 Bytes - 14:14:55, 22 March 2025
Renesas.com/2SK1400A-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1507 Bytes - 14:14:55, 22 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1489.pdf | 0.38 | 1 | Request |
