Product Datasheet Search Results:
6 Pages, 398 KB, Original- 2SK1359(F)
- Toshiba
- MOSFET N-CH 1KV 5A TO-3PN - 2SK1359(F)
Product Details Search Results:
Toshiba.co.jp/2SK1359
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1000 V","Tra...
1498 Bytes - 21:35:06, 01 November 2024
Toshiba.co.jp/2SK1359(F)
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd30 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5 A","Mounting":"Through Hole","Drain-Source On-Volt":"1000 V","Pin Count":"3 +Tab","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PN","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"3.8 ohm","Number of Elements":"1"}...
1426 Bytes - 21:35:06, 01 November 2024
Toshiba.co.jp/2SK1359F
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd30 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5 A","Mounting":"Through Hole","Drain-Source On-Volt":"1000 V","Pin Count":"3 +Tab","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PN","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"3.8 ohm","Number of Elements":"1"}...
1451 Bytes - 21:35:06, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK1359.pdf | 0.40 | 1 | Request |
