Product Datasheet Search Results:
- 2SJ387(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
- 2SJ387(L)-(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ387(L)/(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ387(L)
- Renesas Electronics
- 10 A, 20 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SJ387(L)
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"10 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Sha...
1397 Bytes - 23:31:29, 20 January 2025
Documentation and Support
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ERG2SJ362.pdf | 0.92 | 1 | Request | |
ERG2SJ390H.pdf | 0.92 | 1 | Request | |
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