Product Datasheet Search Results:
- 2SJ181(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
- 2SJ181(L)-(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ181(L)/(S)
- Hitachi Semiconductor
- Silicon P-Channel MOS FET
- 2SJ181(L)(S)
- N/a
- FET Data Book
- 2SJ181(L)
- Renesas Electronics
- 25 ohm, POWER, FET
Product Details Search Results:
Renesas.com/2SJ181(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"25 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
980 Bytes - 10:42:44, 17 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
ERG12SJ181E.pdf | 0.92 | 1 | Request | |
ERG12SJ181.pdf | 0.92 | 1 | Request | |
ERG2SJ181H.pdf | 0.92 | 1 | Request | |
ERG2SJ181E.pdf | 0.92 | 1 | Request | |
ERG12SJ181P.pdf | 0.92 | 1 | Request | |
ERG2SJ181V.pdf | 0.92 | 1 | Request | |
ERG2SJ181P.pdf | 0.92 | 1 | Request | |
ERG12SJ181J.pdf | 0.92 | 1 | Request | |
ERG2SJ181U.pdf | 0.92 | 1 | Request | |
ERG2SJ181.pdf | 0.92 | 1 | Request | |
ERG12SJ181V.pdf | 0.92 | 1 | Request |