Product Datasheet Search Results:
6 Pages, 56 KB, Original- 2SD467
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial
8 Pages, 47 KB, Original- 2SD467B
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial Transistor
6 Pages, 56 KB, Original- 2SD467BTZ-E
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial
8 Pages, 47 KB, Original- 2SD467C
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial Transistor
6 Pages, 56 KB, Original- 2SD467CTZ-E
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial
8 Pages, 172 KB, Original- 2SD467BTZ
- Renesas Technology
- GP BJT
8 Pages, 172 KB, Original- 2SD467-C
- Renesas Technology
- Trans GP BJT NPN 20V 0.7A 3-Pin TO-92
8 Pages, 43 KB, Original- 2SD467C
- Renesas Electronics
- 700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
8 Pages, 83 KB, Original- 2SD467
- Various Russian Datasheets
- Transistor
Product Details Search Results:
Hitachi.co.jp/2SD467B
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"150m","I(CBO) Max. (A)":"1u","Absolute Max. Power Diss. (W)":"500m","I(C) Abs.(A) Collector Current":"700m","@V(CE) (V) (Test Condition)":"1","f(T) Min. (Hz) Transition Freq":"280M","V(BR)CEO (V)":"20","Package":"TO-92","h(FE) Min. Static Current Gain":"85","V(BR)CBO (V)":"25","Military":"N","C(obo) (Max) (F)":"12p"}...
853 Bytes - 06:25:45, 18 November 2024
Hitachi.co.jp/2SD467C
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"150m","I(CBO) Max. (A)":"1u","Absolute Max. Power Diss. (W)":"500m","I(C) Abs.(A) Collector Current":"700m","@V(CE) (V) (Test Condition)":"1","f(T) Min. (Hz) Transition Freq":"280M","V(BR)CEO (V)":"20","Package":"TO-92","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"25","Military":"N","C(obo) (Max) (F)":"12p"}...
852 Bytes - 06:25:45, 18 November 2024
N_a/2SD467
{"Category":"NPN Transistor, Transistor","Amps":"0.7A","MHz":"280 MHz","Volts":"25V"}...
514 Bytes - 06:25:45, 18 November 2024
Renesas.com/2SD467BTZ
815 Bytes - 06:25:45, 18 November 2024
Renesas.com/2SD467-C
841 Bytes - 06:25:45, 18 November 2024
Renesas.com/2SD467C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-92(1), 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"20 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"280 MHz","Collector Current-Max (IC)":"0.7000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Pol...
1358 Bytes - 06:25:45, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FA1-TE2SD40P.pdf | 78.65 | 1 | Request |
