Product Datasheet Search Results:

2SC5242.pdf6 Pages, 424 KB, Original
2SC5242
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor
2SC5242OTU.pdf6 Pages, 449 KB, Original
2SC5242OTU
Fairchild
TRANS NPN 250V 17A TO-3P - 2SC5242OTU
2SC5242RTU.pdf6 Pages, 449 KB, Original
2SC5242RTU
Fairchild
TRANS NPN 250V 17A TO-3P - 2SC5242RTU
2SC5242.pdf1 Pages, 45 KB, Scan
2SC5242
N/a
Shortform Data and Cross References (Misc Datasheets)
2SC5242OTU.pdf8 Pages, 550 KB, Original
2SC5242OTU
On Semiconductor
Trans GP BJT NPN 250V 17A 130000mW 3-Pin(3+Tab) TO-3P Tube
2SC5242RTU.pdf8 Pages, 550 KB, Original
2SC5242RTU
On Semiconductor
Trans GP BJT NPN 250V 17A 130000mW 3-Pin(3+Tab) TO-3P Tube
2SC5242.pdf4 Pages, 125 KB, Original
2SC5242-O.pdf4 Pages, 114 KB, Original
2SC5242-O
Toshiba
TRANS NPN 230V 15A TO-3PN - 2SC5242-O
2SC5242-O(Q).pdf4 Pages, 114 KB, Original
2SC5242-O(Q)
Toshiba
TRANS NPN 230V 15A TO-3PN - 2SC5242-O(Q)
2SC5242-O(Q,T).pdf4 Pages, 114 KB, Original
2SC5242-O(Q,T)
Toshiba
Transistors Bipolar (BJT) Transistor NPN 230V 15A
2SC5242-R.pdf4 Pages, 114 KB, Original
2SC5242-R
Toshiba
Transistors Bipolar (BJT) Transistor NPN 230V 15A

Product Details Search Results:

Fairchildsemi.com/2SC5242OTU
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"17A","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"30MHz","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 800mA, 8A","Current - Collector Cutoff (Max)":"5\u00b5A (ICBO)","Series":"-","Package / Case":"TO-3P-3, SC-65-3","Supplier Device Package":"TO-3P","PCN Design/Specification":"Heat Sink Drawing Update 11/Feb/2014","Packaging":"Tube","Datasheets":"2SC5242, FJ43...
1842 Bytes - 05:57:21, 23 November 2024
Fairchildsemi.com/2SC5242RTU
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"17A","Frequency - Transition":"30MHz","Transistor Type":"NPN","Product Photos":"TO-3P-3,TO-247-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 800mA, 8A","Supplier Device Package":"TO-3P","Series":"-","Package / Case":"TO-3P-3, SC-65-3","PCN Design/Specification":"Heat Sink Drawing Update 11/Feb/2014","Voltage - Collector Emitter Breakdown (Max)":"250V","Packaging":"Tube","Datasheets":"2SC5242, FJ4...
1597 Bytes - 05:57:21, 23 November 2024
N_a/2SC5242
{"Category":"NPN Transistor, Transistor","Amps":"15A","MHz":"30 MHz","Volts":"230V"}...
518 Bytes - 05:57:21, 23 November 2024
Onsemi.com/2SC5242OTU
{"Collector Current (DC) ":"17(A)","Packaging":"Rail/Tube","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Operating Temp Range":"-50C to 150C","Operating Temperature Classification":"Automotive","Power Dissipation":"130(W)","Rad Hardened":"No","Frequency":"30(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"250(V)","DC Current Gain":"80","Package Type":"TO-3P","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":...
1574 Bytes - 05:57:21, 23 November 2024
Onsemi.com/2SC5242RTU
{"Collector Current (DC) ":"17(A)","Transistor Polarity":"NPN","Operating Temperature Classification":"Automotive","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Rail/Tube","Power Dissipation":"130(W)","Operating Temp Range":"-50C to 150C","Frequency":"30(MHz)","Package Type":"TO-3P","Collector-Base Voltage":"250(V)","DC Current Gain":"55@1A@5V","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number of Elem...
1574 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-16C1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"35","Collector-emitter Voltage-Max":"230 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"15 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1378 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-16C1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"230 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"15 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1390 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242O
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"130","V(BR)CBO (V)":"230","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"15","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"230","Package":"TO-247var","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"800m","V(BR)CEO (V)":"230","Military":"N","@I(C) (A) (Te...
1016 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242-O(Q)
{"Factory Pack Quantity":"50","Transistor Polarity":"NPN","Emitter- Base Voltage VEBO":"5 V","Package / Case":"TO-3P-3","Mounting Style":"Through Hole","Product Category":"Bipolar Transistors - BJT","DC Collector/Base Gain hfe Min":"80","DC Current Gain hFE Max":"160","Collector- Emitter Voltage VCEO Max":"230 V","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Toshiba","Collector-Emitter Saturation Voltage":"0.4 V","Maximum DC Collector Current":"15 A","RoHS":"Details","Ga...
1757 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242-R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-16C1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"55","Collector-emitter Voltage-Max":"230 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"15 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1390 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242R
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"130","V(BR)CBO (V)":"230","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"55","I(C) Abs.(A) Collector Current":"15","h(FE) Max. Current gain.":"110","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"230","Package":"TO-247var","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"800m","V(BR)CEO (V)":"230","Military":"N","@I(C) (A) (Te...
1016 Bytes - 05:57:21, 23 November 2024
Toshiba.co.jp/2SC5242-R(Q)
{"Factory Pack Quantity":"50","Gain Bandwidth Product fT":"30 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Minimum Operating Temperature":"- 55 C","Series":"2SC5242","DC Collector/Base Gain hfe Min":"55","DC Current Gain hFE Max":"110","Collector-Emitter Saturation Voltage":"0.4 V","Collector- Emitter Voltage VCEO Max":"230 V","Emitter- Base Voltage VEBO":"5 V","Collector- Base Voltage VCBO":"230 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"130 W","Package...
1531 Bytes - 05:57:21, 23 November 2024

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