Product Datasheet Search Results:
- 2SC5198-O(Q)
- Toshiba
- Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN
- 2SC5198-O(S1,E,S)
- Toshiba
- Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications
- 2SC5198-O(S1,X,S)
- Toshiba
- Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN
- 2SC5198-O(S1,X,S)""
- Toshiba
- Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN
- 2SC5198-R
- Toshiba America Electronic Components, Inc.
- 10 A, 140 V, NPN, Si, POWER TRANSISTOR
- 2SC5198-R(Q)
- Toshiba
- Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN
Product Details Search Results:
N_a/2SC5198
{"Category":"NPN Transistor, Transistor","Amps":"10A","MHz":"30 MHz","Volts":"140V"}...
517 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-16C1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"35","Collector-emitter Voltage-Max":"140 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor ...
1394 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198O
{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"140","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"140","Package":"TO-247var","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"700m","V(BR)CEO (V)":"140","Military":"N","@I(C) (A) (Te...
1015 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-O(Q)
{"Collector Current (DC) ":"10 A","Product Category":"GP\u00a0BJT","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"10 A","Collector-Emitter Voltage":"140 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"80","Operating Temperature Classification":"Military","Rad Hardened":"No","Frequency":"30 MHz","Package Type":"TO-3PN","Collector-Base Voltage":"140 V","DC Current Gain":"80","Operating Temp Range":"-55C to 150C","Power Dissipation":"1...
1426 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-O(S1,E,S)
1089 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-O(S1,X,S)
{"Collector Current (DC) ":"10 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"140 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"100 W","Operating Temp Range":"-55C to 150C","Frequency":"30 MHz","Package Type":"TO-3P(N)","Collector-Base Voltage":"140 V","DC Current Gain":"80","Pin Count":"3 +Tab","Number of Elements":"1"}...
1518 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-O(S1,X,S)""
{"Collector Current (DC) ":"10 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"140 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Pin Count":"3 +Tab","Power Dissipation":"100 W","Operating Temp Range":"-55C to 150C","Frequency":"30 MHz","Package Type":"TO-3P(N)","Collector-Base Voltage":"140 V","DC Current Gain":"80","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Number of Elements":"1"}...
1535 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-16C1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"55","Collector-emitter Voltage-Max":"140 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor ...
1406 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198R
{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"140","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"55","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"110","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"140","Package":"TO-247var","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"700m","V(BR)CEO (V)":"140","Military":"N","@I(C) (A) (Te...
1016 Bytes - 23:01:28, 22 December 2024
Toshiba.co.jp/2SC5198-R(Q)
{"Collector Current (DC) ":"10(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"140(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Pin Count":"3 +Tab","Power Dissipation":"100(W)","Operating Temp Range":"-55C to 150C","Frequency":"30(MHz)","Package Type":"TO-3PN","Collector-Base Voltage":"140(V)","DC Current Gain":"55@1A@5V","Category ":"Bipolar Power","Output Power":"Not Required(W)","Configuration":"Single","Operating Temperature Classification":"Military","Nu...
1575 Bytes - 23:01:28, 22 December 2024
Documentation and Support
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