Product Datasheet Search Results:

2SB1495.pdf1 Pages, 44 KB, Scan
2SB1495
N/a
Shortform Data and Cross References (Misc Datasheets)
2SB1495.pdf4 Pages, 141 KB, Original
2SB1495(Q).pdf4 Pages, 145 KB, Original
2SB1495(Q)
Toshiba
Trans Darlington PNP 100V 3A 2000mW 3-Pin(3+Tab) TO-220NIS
2SB1495,Q(J.pdf4 Pages, 145 KB, Original
2SB1495,Q(J
Toshiba
Trans Darlington NPN 3 Pin
2SB1495,Q(J).pdf4 Pages, 82 KB, Original

Product Details Search Results:

N_a/2SB1495
{"Category":"Transistor, Darlington Transistor","Amps":"3A","MHz":"<1 MHz","Volts":"100V"}...
540 Bytes - 20:39:27, 21 November 2024
Toshiba.co.jp/2SB1495
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-10R1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"100 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"3 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package...
1405 Bytes - 20:39:27, 21 November 2024
Toshiba.co.jp/2SB1495(Q)
{"Polarity":"PNP","Collector Current (DC) ":"3(A)","Base-Emitter Saturation Voltage (Max)":"2(V)","Power Dissipation":"2(W)","Mounting":"Through Hole","Emitter-Base Voltage":"8(V)","Rad Hardened":"No","Maximum Collector Cut-off Current":"10","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220NIS","Collector-Base Voltage":"100(V)","DC Current Gain":"2000","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"1"}...
1568 Bytes - 20:39:27, 21 November 2024
Toshiba.co.jp/2SB1495,Q(J
998 Bytes - 20:39:27, 21 November 2024
Toshiba.co.jp/2SB1495,Q(J)
828 Bytes - 20:39:27, 21 November 2024

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