Datasheet.Directory

{"P(D) Max.(W) Power Dissipation":"300m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"100n","Type (NPN/PNP)":"PNP","Package":"TSOP","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...