Product Datasheet Search Results:

2SA1618.pdf1 Pages, 34 KB, Scan
2SA1618
N/a
Transistor Substitution Data Book 1993
2SA1618.pdf2 Pages, 137 KB, Scan
2SA1618
Toshiba
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
2SA1618.pdf4 Pages, 131 KB, Original
2SA1618
Toshiba America Electronic Components, Inc.
150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1618-GR.pdf2 Pages, 137 KB, Scan
2SA1618-GR
Toshiba
Transistors Bipolar (BJT) -150mA -50V
2SA1618GR.pdf3 Pages, 179 KB, Scan
2SA1618GR
Toshiba
Silicon PNP Epitaxial Transistor
2SA1618-GR(TE85L).pdf4 Pages, 204 KB, Original
2SA1618-GR(TE85L)
Toshiba
Trans GP BJT PNP 50V 0.15A 5-Pin SMV T/R
2SA1618-GR(TE85L,F.pdf4 Pages, 238 KB, Original
2SA1618-GR(TE85L,F
Toshiba
Trans GP BJT PNP 50V 0.15A 300mW 5-Pin SMV T/R
2SA1618-GR(TE85L,F).pdf10 Pages, 94 KB, Original
2SA1618-GR(TE85L,F)
Toshiba
2SA1618-GR(TE85L,F)
2SA1618GRTE85R.pdf2 Pages, 68 KB, Scan
2SA1618GRTE85R
Toshiba America Electronic Components, Inc.
150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1618TE85L.pdf2 Pages, 68 KB, Scan
2SA1618TE85L
Toshiba America Electronic Components, Inc.
150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1618TE85R.pdf2 Pages, 68 KB, Scan
2SA1618TE85R
Toshiba America Electronic Components, Inc.
150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1618-Y.pdf4 Pages, 131 KB, Original
2SA1618-Y
Toshiba America Electronic Components, Inc.
150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR

Product Details Search Results:

N_a/2SA1618
{"Category":"PNP Transistor, Transistor","Amps":"0.15A","MHz":">80 MHz","Volts":"50V"}...
523 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position...
1457 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Positio...
1476 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618GR
{"P(D) Max.(W) Power Dissipation":"300m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"100n","Type (NPN/PNP)":"PNP","Package":"TSOP","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...
973 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L)
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.3 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SSOP","Collector-Base Voltage":"50 V","DC Current Gain":"200","Pin Count":"5","Number of Elements":"2"}...
1521 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L,F
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"80 MHz (Min)","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"200","DC Current Gain hFE Max":"400","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"- 50 V","Minimum Operating Temperature":"- 55 C","Pd - Power Dissipation":"300 mW","Package / Case":"SMV","Maximum DC Collector Cur...
1615 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L,F)
858 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618GRTE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1424 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618TE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1410 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618TE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1410 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Positio...
1469 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618Y
{"P(D) Max.(W) Power Dissipation":"300m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"120","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"240","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"100n","Type (NPN/PNP)":"PNP","Package":"TSOP","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...
967 Bytes - 22:57:49, 30 March 2025

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