Product Datasheet Search Results:
- 2SA1618
- Toshiba America Electronic Components, Inc.
- 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1618-GR
- Toshiba
- Transistors Bipolar (BJT) -150mA -50V
- 2SA1618-GR(TE85L)
- Toshiba
- Trans GP BJT PNP 50V 0.15A 5-Pin SMV T/R
- 2SA1618-GR(TE85L,F
- Toshiba
- Trans GP BJT PNP 50V 0.15A 300mW 5-Pin SMV T/R
- 2SA1618-GR(TE85L,F)
- Toshiba
- 2SA1618-GR(TE85L,F)
- 2SA1618GRTE85R
- Toshiba America Electronic Components, Inc.
- 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1618TE85L
- Toshiba America Electronic Components, Inc.
- 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1618TE85R
- Toshiba America Electronic Components, Inc.
- 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1618-Y
- Toshiba America Electronic Components, Inc.
- 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Product Details Search Results:
N_a/2SA1618
{"Category":"PNP Transistor, Transistor","Amps":"0.15A","MHz":">80 MHz","Volts":"50V"}...
523 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position...
1457 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Positio...
1476 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618GR
{"P(D) Max.(W) Power Dissipation":"300m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"100n","Type (NPN/PNP)":"PNP","Package":"TSOP","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...
973 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L)
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.3 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SSOP","Collector-Base Voltage":"50 V","DC Current Gain":"200","Pin Count":"5","Number of Elements":"2"}...
1521 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L,F
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"80 MHz (Min)","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"200","DC Current Gain hFE Max":"400","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"- 50 V","Minimum Operating Temperature":"- 55 C","Pd - Power Dissipation":"300 mW","Package / Case":"SMV","Maximum DC Collector Cur...
1615 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-GR(TE85L,F)
858 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618GRTE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1424 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618TE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1410 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618TE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1410 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618-Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMV, 2-3L1A, 5 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Positio...
1469 Bytes - 22:57:49, 30 March 2025
Toshiba.co.jp/2SA1618Y
{"P(D) Max.(W) Power Dissipation":"300m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"120","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"240","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"100n","Type (NPN/PNP)":"PNP","Package":"TSOP","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...
967 Bytes - 22:57:49, 30 March 2025
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