Product Datasheet Search Results:

2SA1150.pdf1 Pages, 43 KB, Scan
2SA1150
N/a
Shortform Data and Cross References (Misc Datasheets)
2SA1150-O.pdf1 Pages, 76 KB, Scan
2SA1150-O
N/a
Transistor Shortform Datasheet & Cross References
2SA1150-Y.pdf1 Pages, 76 KB, Scan
2SA1150-Y
N/a
Transistor Shortform Datasheet & Cross References
2SA1150.pdf1 Pages, 72 KB, Original
2SA1150
Toshiba
TO-92 Mini Package Transistors / Junction FETs
2SA1150O.pdf3 Pages, 192 KB, Original
2SA1150O
Toshiba
TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)
2SA1150-O(F).pdf3 Pages, 170 KB, Original
2SA1150-O(F)
Toshiba
Trans GP BJT PNP 30V 0.8A 300mW 3-Pin
2SA1150Y.pdf3 Pages, 192 KB, Original
2SA1150Y
Toshiba
TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)
2SA1150-Y(F).pdf3 Pages, 170 KB, Original
2SA1150-Y(F)
Toshiba
Trans GP BJT PNP 30V 0.8A 3-Pin Mini

Product Details Search Results:

N_a/2SA1150
{"Category":"PNP Transistor, Transistor","Amps":"0.8A","MHz":"120 MHz","Volts":"35V"}...
519 Bytes - 17:37:39, 20 September 2024
Toshiba.co.jp/2SA1150O
{"@I(C) (A) (Test Condition)":"100u","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"200","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"30","Package":"SPAK","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"35","Military":"N","C(obo) (Max) (F)":"19p"}...
844 Bytes - 17:37:39, 20 September 2024
Toshiba.co.jp/2SA1150-O(F)
{"Collector Current (DC) ":"0.8(A)","Configuration":"Single","Transistor Polarity":"PNP","Collector-Emitter Voltage":"30(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"120(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"35(V)","DC Current Gain":"100","Package Type":"Mini","Power Dissipation":"0.3(W)","Pin Count":"3","Number ...
1564 Bytes - 17:37:39, 20 September 2024
Toshiba.co.jp/2SA1150Y
{"@I(C) (A) (Test Condition)":"100u","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"300m","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"320","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"30","Package":"SPAK","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"35","Military":"N","C(obo) (Max) (F)":"19p"}...
844 Bytes - 17:37:39, 20 September 2024
Toshiba.co.jp/2SA1150-Y(F)
{"Collector Current (DC) ":"0.8 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"30 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.3 W","Rad Hardened":"No","Frequency":"120 MHz","Package Type":"Mini","Collector-Base Voltage":"35 V","DC Current Gain":"160","Operating Temp Range":"-55C to 150C","Pin Count":"3","Number of Elements":"1"}...
1498 Bytes - 17:37:39, 20 September 2024