Product Datasheet Search Results:
- 2SA1020-Y(TE6,F,M)
- Toshiba
- Bipolar Transistors - BJT PNP -50V -2A 900mW
Product Details Search Results:
Toshiba.co.jp/2SA1020-Y(TE6,F,M)
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"100 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"70","DC Current Gain hFE Max":"240","Collector-Emitter Saturation Voltage":"- 0.5 V","Collector- Emitter Voltage VCEO Max":"- 50 V","Packaging":"Ammo Pack","Collector- Base Voltage VCBO":"- 50 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"9...
1844 Bytes - 10:43:25, 16 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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2SA1020.pdf | 0.16 | 1 | Request |