Product Datasheet Search Results:
- 2SA1015LGR
- Toshiba
- TRANS GP BJT PNP 50V 0.15A 3(2-5F1B)
- 2SA1015LGR(F)
- Toshiba
- TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
Product Details Search Results:
Toshiba.co.jp/2SA1015LGR(F)
{"Mounting":"Through Hole","Rad Hardened":"No","Package Type":"TO-92","Pin Count":"3"}...
1122 Bytes - 09:43:41, 02 December 2024
Various/2SA1015LGR
{"@I(C) (A) (Test Condition)":"2.0m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"400m","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"80M","V(BR)CEO (V)":"50","Package":"TO-92","h(FE) Min. Static Current Gain":"200","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"4.0p"}...
848 Bytes - 09:43:41, 02 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2SA1013.pdf | 0.16 | 1 | Request |