Product Datasheet Search Results:

2N743.pdf9 Pages, 178 KB, Scan
2N743
Thomson-csf
Signal Transistors and Field Effect Transistors 1976
2N743.pdf3 Pages, 343 KB, Original
2N743
Central Semiconductor
NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch
2N743A.pdf5 Pages, 273 KB, Original
2N743A
Central Semiconductor Corp.
15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N743ALEADFREE.pdf5 Pages, 273 KB, Original
2N743ALEADFREE
Central Semiconductor Corp.
15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N743.pdf1 Pages, 42 KB, Original
2N743
Crimson Semiconductor
Transistor Selection Guide

Product Details Search Results:

Centralsemi.com/2N743A
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"15 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape...
1287 Bytes - 09:38:36, 28 December 2024
Centralsemi.com/2N743ALEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"15 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","DC Current Gain-Min (hFE)":"20","Terminal Position":"BOTTOM","Transistor ...
1387 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1512 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1552 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7432
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"201 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"500 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGL...
1388 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7432U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"51 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"204 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1555 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7433
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1514 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7433U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"172 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1537 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1511 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1552 Bytes - 09:38:36, 28 December 2024

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