Product Datasheet Search Results:
- 2N743
- Thomson-csf
- Signal Transistors and Field Effect Transistors 1976
- 2N743
- Central Semiconductor
- NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch
- 2N743A
- Central Semiconductor Corp.
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
- 2N743ALEADFREE
- Central Semiconductor Corp.
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
- 2N743
- Crimson Semiconductor
- Transistor Selection Guide
Product Details Search Results:
Centralsemi.com/2N743A
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"15 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape...
1287 Bytes - 09:38:36, 28 December 2024
Centralsemi.com/2N743ALEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"15 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","DC Current Gain-Min (hFE)":"20","Terminal Position":"BOTTOM","Transistor ...
1387 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1512 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1552 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7432
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"201 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"500 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGL...
1388 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7432U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"51 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"204 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1555 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7433
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1514 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSF2N7433U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"172 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1537 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1511 Bytes - 09:38:36, 28 December 2024
Irf.com/JANSG2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1552 Bytes - 09:38:36, 28 December 2024
Documentation and Support
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2N7002DW.pdf | 0.19 | 1 | Request | |
2N7002.pdf | 0.22 | 1 | Request | |
VV5QC21-02N7TD0.pdf | 14.64 | 1 | Request | |
VV5QC21-02N7FD1-S.pdf | 14.64 | 1 | Request | |
VV5QC21-12N7SD0-D0R.pdf | 14.64 | 1 | Request | |
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VV5Q11-02N7FS0-DS.pdf | 12.21 | 1 | Request | |
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VV5Q11-02N7FU0-D.pdf | 12.21 | 1 | Request |