Datasheet.Directory

{"C(iss) Max. (F)":"2.7n","Absolute Max. Power Diss. (W)":"150","V(BR)DSS (V)":"500","I(D) Abs. Max.(A) Drain Curr.":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"515m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"48","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"6.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-2...

{"C(iss) Max. (F)":"2.7n","Absolute Max. Power Diss. (W)":"150","V(BR)DSS (V)":"500","I(D) Abs. Max.(A) Drain Curr.":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"515m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"48","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"6.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-2...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technolog...

{"Category":"MOSFET","Description":"Value","Package":"3TO-254AA","Mounting":"Through Hole","Operating Temperature":"-55 to 150 \u00b0C","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Description":"Value","Package":"3TO-254AA","Mounting":"Through Hole","Operating Temperature":"-55 to 150 \u00b0C","Manufacturer":"International Rectifier"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Res...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"190(Max) ns","Typical Turn-Off Delay Time":"170(Max) ns","Description":"Value","Maximum Continuous Drain Current":"12 A","Package":"3TO-254AA","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"515@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"130(Max) ns"}...