Product Datasheet Search Results:
3 Pages, 136 KB, Original- 2N7002LT1
- Leshan Radio Company Co., Ltd.
- Small Signal MOSFET 115 mAmps, 60 Volts
3 Pages, 136 KB, Original- L2N7002LT1
- Leshan Radio Company Co., Ltd.
- 60 V, 115 mA, small signal MOSFET
6 Pages, 566 KB, Original- L2N7002LT1G
- Leshan Radio Co.
- Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
1 Pages, 57 KB, Scan- 2N7002LT1-TP
- Micro Commercial Components Corp.
- 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 90 KB, Original- 2N7002LT1
- On Semiconductor
- MOSFET N-CH 60V 115MA SOT-23 - 2N7002LT1
8 Pages, 65 KB, Original- 2N7002LT1-D
- On Semiconductor
- Small Signal MOSFET 115 mAmps, 60 Volts N-Channel
4 Pages, 90 KB, Original- 2N7002LT1G
- On Semiconductor
- MOSFET N-CH 60V 115MA SOT-23 - 2N7002LT1G
4 Pages, 97 KB, Original- 2N7002LT1H
- On Semiconductor L.l.c.
- 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
13 Pages, 101 KB, Original- 2N7002LT1
- Philips Semiconductors / Nxp Semiconductors
- N-channel enhancement mode field-effect transistor
4 Pages, 328 KB, Scan- 2N7002LT1
- Transys Electronics
- N-CHANNEL ENHANCEMENT
Product Details Search Results:
Lrc.cn/L2N7002LT1G
{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"11 ns","Description":"Value","Maximum Continuous Drain Current":"0.115 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7500@10V mOhm","Manufacturer":"LESHAN RADIO CO."}...
1293 Bytes - 18:22:53, 30 November 2024
Mccsemi.com/2N7002LT1-TP
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...
1487 Bytes - 18:22:53, 30 November 2024
Onsemi.com/2N7002LT1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design/Specification":"Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002L","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10","Drain to Source Voltage (Vdss)":"60V","PCN Obso...
1703 Bytes - 18:22:53, 30 November 2024
Onsemi.com/2N7002LT1G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design/Specification":"Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002L Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V",...
1795 Bytes - 18:22:53, 30 November 2024
Onsemi.com/2N7002LT1H
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0750 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1526 Bytes - 18:22:53, 30 November 2024
