Product Datasheet Search Results:

2N7002-01.pdf3 Pages, 62 KB, Original
2N7002-01
Diodes, Inc.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002-01-7.pdf3 Pages, 51 KB, Original
2N7002-01-7
Diodes Incorporated
115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002-01.pdf2 Pages, 46 KB, Original
2N7002-01
Vishay
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Details Search Results:

Diodes.com/2N7002-01-7
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Su...
1453 Bytes - 12:55:01, 01 October 2024