Product Datasheet Search Results:

2N6897.pdf5 Pages, 61 KB, Original
2N6897
Fairchild Semiconductor
Power MOS Field Effect Transistor
2N6897.pdf5 Pages, 268 KB, Scan
2N6897
Harris Semiconductor
Power MOSFET Data Book 1990
2N6897TX.pdf4 Pages, 202 KB, Scan
2N6897TX
Microsemi Corp.
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N6897.pdf1 Pages, 106 KB, Scan
2N6897
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
2N6897TX.pdf1 Pages, 31 KB, Original
2N6897TX
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
2N6897TXV.pdf1 Pages, 31 KB, Original
2N6897TXV
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Dla.mil/2N6897+JANTX
{"C(iss) Max. (F)":"1.5n","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"8.0","I(D) Abs. Max.(A) Drain Curr.":"7.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"275n","r(DS)on Max. (Ohms)":"465m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AA","I(DSS) M...
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Dla.mil/2N6897+JANTXV
{"C(iss) Max. (F)":"1.5n","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"8.0","I(D) Abs. Max.(A) Drain Curr.":"7.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"275n","r(DS)on Max. (Ohms)":"465m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AA","I(DSS) M...
1332 Bytes - 21:46:14, 17 November 2024
Microsemi.com/2N6897TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"12 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1379 Bytes - 21:46:14, 17 November 2024

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