Product Datasheet Search Results:
- 2N6897
- Fairchild Semiconductor
- Power MOS Field Effect Transistor
- 2N6897
- Harris Semiconductor
- Power MOSFET Data Book 1990
- 2N6897TX
- Microsemi Corp.
- 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Dla.mil/2N6897+JANTX
{"C(iss) Max. (F)":"1.5n","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"8.0","I(D) Abs. Max.(A) Drain Curr.":"7.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"275n","r(DS)on Max. (Ohms)":"465m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AA","I(DSS) M...
1326 Bytes - 21:46:14, 17 November 2024
Dla.mil/2N6897+JANTXV
{"C(iss) Max. (F)":"1.5n","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"8.0","I(D) Abs. Max.(A) Drain Curr.":"7.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"275n","r(DS)on Max. (Ohms)":"465m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AA","I(DSS) M...
1332 Bytes - 21:46:14, 17 November 2024
Microsemi.com/2N6897TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"12 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1379 Bytes - 21:46:14, 17 November 2024
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