Product Datasheet Search Results:
7 Pages, 885 KB, Original- JANTX2N6845
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 4A 3-Pin TO-39
1 Pages, 22 KB, Scan- 2N6845
- International Rectifier
- 2.5 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Dla.mil/2N6845+JANTX
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","g(fs) Max, (S) Trans. conduct,":"3.7","r(DS)on Max. (Ohms)":"0.6","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"2.6","Package":"TO-205AF","I(DSS) Min. (A)":"250u","Military":"Y","Mil Number":"JANTX2N6845","t(r) Max. (s) Rise time":"100n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"100n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"4.0"}...
1008 Bytes - 17:13:16, 18 February 2025
Dla.mil/2N6845+JANTXV
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","g(fs) Max, (S) Trans. conduct,":"3.7","r(DS)on Max. (Ohms)":"0.6","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"2.6","Package":"TO-205AF","I(DSS) Min. (A)":"250u","Military":"Y","Mil Number":"JANTXV2N6845","t(r) Max. (s) Rise time":"100n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"100n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"4.0"}...
1013 Bytes - 17:13:16, 18 February 2025
Infineon.com/JANTX2N6845
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"4(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1452 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"16 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"115 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1364 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1216 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1220 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845EAPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1289 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1222 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845EBPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1288 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845EC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1220 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845ECPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1286 Bytes - 17:13:16, 18 February 2025
Irf.com/2N6845ED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1220 Bytes - 17:13:16, 18 February 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| INSTALLATION_AND_OPERATING_INSTRUCTIONS_PDF_EN_6845_11_AGM_XX_6845_11_AGM_XXX_500.pdf | 0.74 | 1 | Request | |
| INSTALLATION_AND_OPERATING_INSTRUCTIONS_PDF_EN_6845_11_AGM_XXX_6845_11_AGM_XXX_500.pdf | 0.51 | 1 | Request | |
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| 556845.pdf | 0.05 | 1 | Request |
