Datasheet.Directory

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"4.5","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"1.5","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTX2N6802","t(r) Max. (s) Rise time":"30n","V(BR)DSS (V)":"500","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"1.5","I(D) Abs. Drain Current (A)":"3.5"}...

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"4.5","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"1.5","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTXV2N6802","t(r) Max. (s) Rise time":"30n","V(BR)DSS (V)":"500","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"1.5","I(D) Abs. Drain Current (A)":"3.5"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"2.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"2.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"500(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Category":"MOSFET","Description":"Value","Package":"3TO-205AF","Mounting":"Through Hole","Operating Temperature":"-55 to 150 \u00b0C","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Description":"Value","Package":"3TO-205AF","Mounting":"Through Hole","Operating Temperature":"-55 to 150 \u00b0C","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"500 V","Number of E...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Turn-Off Delay Time":"55(Max) ns","Description":"Value","Maximum Continuous Drain Current":"2.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1725@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Turn-Off Delay Time":"55(Max) ns","Description":"Value","Maximum Continuous Drain Current":"2.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1725@10V mOhm","Manufacturer":"International Rectifier"}...