Product Datasheet Search Results:
8 Pages, 87 KB, Original- 2N6800TX
- Fairchild Semiconductor
- 25A, 100V, 0.07 ?, Rad Hard, N-Channel Power MOSFETs
5 Pages, 156 KB, Scan- 2N6800TX
- International Rectifier
- 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
5 Pages, 156 KB, Scan- 2N6800TXV
- International Rectifier
- 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6800TX
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1376 Bytes - 01:58:08, 13 January 2025
Irf.com/2N6800TXV
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1387 Bytes - 01:58:08, 13 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| E2M3800TX.pdf | 0.04 | 1 | Request |
