Product Datasheet Search Results:

2N6798U.pdf23 Pages, 167 KB, Original
JAN2N6798U.pdf23 Pages, 167 KB, Original
JANHC2N6798U.pdf23 Pages, 167 KB, Original
JANKC2N6798U.pdf23 Pages, 167 KB, Original
JANS2N6798U.pdf23 Pages, 167 KB, Original
JANTX2N6798U.pdf23 Pages, 167 KB, Original
JANTXV2N6798U.pdf23 Pages, 167 KB, Original
JANTXV2N6798U.pdf7 Pages, 163 KB, Original
JANTXV2N6798U
Infineon Technologies Ag
Trans MOSFET N-CH 200V 5.5A 18-Pin LLCC
2N6798UJANTX.pdf7 Pages, 163 KB, Original
2N6798UJANTX
International Rectifier
Trans MOSFET N-CH 200V 5.5A 18-Pin LLCC

Product Details Search Results:

Infineon.com/JANTXV2N6798U
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"5.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...
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Irf.com/2N6798UJANTX
{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5.5 A","Mounting":"Surface Mount","Drain-Source On-Volt":"200 V","Pin Count":"18","Power Dissipation":"25 W","Operating Temp Range":"-55C to 125C","Package Type":"LLCC","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.46 ohm","Number of Elements":"1"}...
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Irf.com/2N6798UJANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Turn-Off Delay Time":"50(Max) ns","Description":"Value","Maximum Continuous Drain Current":"5.5 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"460@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"40(Max) ns"}...
1385 Bytes - 19:36:54, 20 September 2024
Irf.com/JANTX2N6798U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1548 Bytes - 19:36:54, 20 September 2024
Irf.com/JANTXV2N6798U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1556 Bytes - 19:36:54, 20 September 2024
Microsemi.com/2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Current - Co...
1585 Bytes - 19:36:54, 20 September 2024
Microsemi.com/JAN2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...
1589 Bytes - 19:36:54, 20 September 2024
Microsemi.com/JANTX2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...
1597 Bytes - 19:36:54, 20 September 2024
Microsemi.com/JANTXV2N6798U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...
1605 Bytes - 19:36:54, 20 September 2024