Datasheet.Directory

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"15","g(fs) Max, (S) Trans. conduct,":"2.1","r(DS)on Max. (Ohms)":"3.6","@V(DS) (V) (Test Condition)":"15","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"800m","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTX2N6786","t(r) Max. (s) Rise time":"20n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":".7","I(D) Abs. Drain Current (A)":"1.2"}...

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"15","g(fs) Max, (S) Trans. conduct,":"2.1","r(DS)on Max. (Ohms)":"3.6","@V(DS) (V) (Test Condition)":"15","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"800m","Package":"TO-39","I(DSS) Min. (A)":"1.0m","Military":"Y","Mil Number":"JANTXV2N6786","t(r) Max. (s) Rise time":"20n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":".7","I(D) Abs. Drain Current (A)":"1.2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.25(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Power Dissipation":"15(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"5.5 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"0.8200 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"1.25 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"1.25 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"4150@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"30(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"1.25 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"4150@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"30(Max) ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.8200 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.5 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"5.5 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"1.25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUN...

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"5.5 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"1.25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUN...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"1.25 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"3700@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"30(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"20(Max) ns","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"1.25 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"15(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"3700@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"30(Max) ns"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.8200 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.5 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...