Datasheet.Directory

{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"27","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"120m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"19","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"27","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"120m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"19","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"27","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"120m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"19","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...

{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...

{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"M...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.0850 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Num...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.0850 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...