Product Datasheet Search Results:
- 2N6759
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 5.5A, 350V/400V
- 2N6759
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.
- 2N6759
- Harris Semiconductor
- Power MOSFET Data Book 1990
- 2N6759
- Ixys Corporation
- High Voltage Power MOSFETs
- 2N6759
- National Semiconductor
- N-thannel Power MOSFETs
- 2N6759
- Semelab Plc.
- 4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
- 2N6759R1
- Semelab Plc.
- 4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
- 2N6759
- Semiconductor Technology, Inc.
- High Voltage MOS Power Field Effect Transistors
Product Details Search Results:
Semelab.co.uk/2N6759
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Number of Terminals":"2","DS B...
1240 Bytes - 19:38:26, 08 April 2025
Semelab.co.uk/2N6759R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistanc...
1301 Bytes - 19:38:26, 08 April 2025
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