Product Datasheet Search Results:

2N6759.pdf5 Pages, 139 KB, Scan
2N6759
Fairchild Semiconductor
N-Channel Power MOSFETs, 5.5A, 350V/400V
2N6759.pdf1 Pages, 34 KB, Scan
2N6759
Motorola
European Master Selection Guide 1986
2N6759.pdf4 Pages, 114 KB, Scan
2N6759
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.
2N6759.pdf4 Pages, 122 KB, Scan
2N6759
Harris Semiconductor
Power MOSFET Data Book 1990
2N6759.pdf12 Pages, 1094 KB, Original
2N6759
Ixys Corporation
High Voltage Power MOSFETs
2N6759.pdf3 Pages, 175 KB, Scan
2N6759
N/a
FET Data Book
2N6759.pdf1 Pages, 32 KB, Original
2N6759
National Semiconductor
N-thannel Power MOSFETs
2N6759.pdf1 Pages, 55 KB, Scan
2N6759
Semelab Plc.
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6759R1.pdf1 Pages, 55 KB, Scan
2N6759R1
Semelab Plc.
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6759.pdf1 Pages, 152 KB, Scan
2N6759
Semiconductor Technology, Inc.
High Voltage MOS Power Field Effect Transistors
2N6759.pdf1 Pages, 42 KB, Scan
2N6759
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Semelab.co.uk/2N6759
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Number of Terminals":"2","DS B...
1240 Bytes - 19:38:26, 08 April 2025
Semelab.co.uk/2N6759R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistanc...
1301 Bytes - 19:38:26, 08 April 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
7B36R552N675G1.pdf0.081Request