Datasheet.Directory

{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"10","V(GS)th Min. (V)":"4.0...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"75(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transisto...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"210 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u0...