Product Datasheet Search Results:
- JAN2N6352
- Defense Logistics Agency
- 5 A, NPN, Si, POWER TRANSISTOR, TO-66
- JANTX2N6352
- Defense Logistics Agency
- 5 A, NPN, Si, POWER TRANSISTOR, TO-66
- JANTXV2N6352
- Defense Logistics Agency
- 5 A, NPN, Si, POWER TRANSISTOR, TO-66
- 2N6352
- Api Electronics Group
- 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66
- 2N6352
- Api Electronics, Inc.
- Short form transistor data
- 2N6352
- Silicon Transistor Corp.
- Low Frequency Silicon Power Transistor
- 2N6352
- Microsemi Corp.
- 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66
- 2N6352JAN
- New England Semiconductor
- NPN DARLINGTON POWER SILICON TRANSISTOR
- 2N6352JANTX
- New England Semiconductor
- NPN DARLINGTON POWER SILICON TRANSISTOR
Product Details Search Results:
Aeroflex.com/JAN2N6352
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"1000","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"DARLINGTON WITH BUILT-IN RESISTOR","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1201 Bytes - 11:03:26, 13 November 2024
Aeroflex.com/JANTX2N6352
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"1000","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"DARLINGTON WITH BUILT-IN RESISTOR","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1211 Bytes - 11:03:26, 13 November 2024
Aeroflex.com/JANTXV2N6352
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"1000","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"DARLINGTON WITH BUILT-IN RESISTOR","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1217 Bytes - 11:03:26, 13 November 2024
Apitech.com/2N6352
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-66, 3 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON...
1277 Bytes - 11:03:26, 13 November 2024
Dla.mil/2N6352+JAN
{"V(CE)sat Max.(V)":"1.5","Absolute Max. Power Diss. (W)":"25","t(on) Max. (s) Turn-On Time":"500n","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"2.0k","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"10M","t(off) Max. (s) Turn-Off Time":"1.2u","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"1.0u","Package":"TO-66var","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"...
1111 Bytes - 11:03:26, 13 November 2024
Dla.mil/2N6352+JANTX
{"V(CE)sat Max.(V)":"1.5","Absolute Max. Power Diss. (W)":"25","t(on) Max. (s) Turn-On Time":"500n","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"2.0k","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"10M","t(off) Max. (s) Turn-Off Time":"1.2u","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"1.0u","Package":"TO-66var","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"...
1123 Bytes - 11:03:26, 13 November 2024
Dla.mil/2N6352+JANTXV
{"V(CE)sat Max.(V)":"1.5","Absolute Max. Power Diss. (W)":"25","t(on) Max. (s) Turn-On Time":"500n","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"2.0k","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"10M","t(off) Max. (s) Turn-Off Time":"1.2u","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"1.0u","Package":"TO-66var","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"...
1128 Bytes - 11:03:26, 13 November 2024
Microsemi.com/2N6352
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-24, 3 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"400","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POW...
1232 Bytes - 11:03:26, 13 November 2024
Microsemi.com/2N6352JANTX
{"Polarity":"NPN","Collector Current (DC) ":"5 A","Collector-Emitter Saturation Voltage":"1.5 V","Collector-Emitter Voltage":"80 V","Mounting":"Through Hole","Emitter-Base Voltage":"12 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"TO-213AA","Collector-Base Voltage":"80 V","DC Current Gain":"2000","Pin Count":"3 +Tab","Number of Elements":"1"}...
1432 Bytes - 11:03:26, 13 November 2024
Microsemi.com/2N6352JANTXV
{"Polarity":"NPN","Collector Current (DC) ":"5 A","Collector-Emitter Saturation Voltage":"1.5 V","Collector-Emitter Voltage":"80 V","Mounting":"Through Hole","Emitter-Base Voltage":"12 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Package Type":"TO-213AA","Collector-Base Voltage":"80 V","DC Current Gain":"2000","Pin Count":"3 +Tab","Number of Elements":"1"}...
1436 Bytes - 11:03:26, 13 November 2024
Microsemi.com/JAN2N6352
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-33, 4 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"5 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POW...
1246 Bytes - 11:03:26, 13 November 2024
Microsemi.com/JANTX2N6352
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"5A","Transistor Type":"NPN - Darlington","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.5V @ 5mA, 5A","Series":"Military, MIL-PRF-19500/472","Package / Case":"TO-205AC, TO-33-4 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"80V","Power - Max":"2W","Packaging":"Bulk","Datasheets":"2N6350-53","Current - Collector Cutoff (Max)":"-","Supplier Device Package":"TO-33","...
1475 Bytes - 11:03:26, 13 November 2024
Documentation and Support
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