Product Datasheet Search Results:
- JAN2N5660
- Defense Logistics Agency
- 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-66
- JANTX2N5660
- Defense Logistics Agency
- 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-66
- JANTXV2N5660
- Defense Logistics Agency
- 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-66
- 2N5660
- Api Electronics Group
- 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-66
- 2N5660
- Api Electronics, Inc.
- Short form transistor data
- 2N5660
- Diode Transistor Co., Inc.
- Transistor Short Form Data - TO-3
- 2N5660
- Silicon Transistor Corp.
- Low Frequency Silicon Power Transistor
- 2N5660
- General Transistor Corp.
- NPN Power Transistors
Product Details Search Results:
Aeroflex.com/JAN2N5660
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"2","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"FLANGE MOUNT","Number of Ele...
1219 Bytes - 02:24:47, 22 December 2024
Aeroflex.com/JANTX2N5660
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"2","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"FLANGE MOUNT","Number of Ele...
1233 Bytes - 02:24:47, 22 December 2024
Aeroflex.com/JANTXV2N5660
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Number of Terminals":"2","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"FLANGE MOUNT","Number of Ele...
1239 Bytes - 02:24:47, 22 December 2024
Apitech.com/2N5660
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Nu...
1231 Bytes - 02:24:47, 22 December 2024
Dla.mil/2N5660+JAN
{"V(CE)sat Max.(V)":".40","Absolute Max. Power Diss. (W)":"20","t(on) Max. (s) Turn-On Time":"500n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"250","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"850n","@V(CBO) (V) (Test Condition)":"250","I(CBO) Max. (A)":"1.0u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Te...
1165 Bytes - 02:24:47, 22 December 2024
Dla.mil/2N5660+JANTX
{"V(CE)sat Max.(V)":".40","Absolute Max. Power Diss. (W)":"20","t(on) Max. (s) Turn-On Time":"500n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"250","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"850n","@V(CBO) (V) (Test Condition)":"250","I(CBO) Max. (A)":"1.0u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Te...
1177 Bytes - 02:24:47, 22 December 2024
Dla.mil/2N5660+JANTXV
{"V(CE)sat Max.(V)":".40","Absolute Max. Power Diss. (W)":"20","t(on) Max. (s) Turn-On Time":"500n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"250","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"850n","@V(CBO) (V) (Test Condition)":"250","I(CBO) Max. (A)":"1.0u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Te...
1183 Bytes - 02:24:47, 22 December 2024
Microsemi.com/2N5660
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER",...
1229 Bytes - 02:24:47, 22 December 2024
Microsemi.com/2N5660JANTX
985 Bytes - 02:24:47, 22 December 2024
Microsemi.com/JAN2N5660
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor ...
1275 Bytes - 02:24:47, 22 December 2024
Microsemi.com/JANTX2N5660
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"2A","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"800mV @ 400mA, 2A","Series":"Military, MIL-PRF-19500/454","Package / Case":"*","Voltage - Collector Emitter Breakdown (Max)":"200V","Supplier Device Package":"*","Packaging":"*","Power - Max":"2W","Current - Collector Cutoff (Max)":"200nA","Standard Package":"1","Mounting Type":"*","DC Current Gain (hFE...
1333 Bytes - 02:24:47, 22 December 2024
Microsemi.com/JANTXV2N5660
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of ...
1251 Bytes - 02:24:47, 22 December 2024
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