Product Datasheet Search Results:
- 2N5630
- Advanced Semiconductor, Inc.
- Silicon Transistor Selection Guide
- 2N5630
- American Microsemiconductor, Inc.
- 16 A, 120 V, NPN, Si, POWER TRANSISTOR
- 2N5630
- Api Electronics Group
- 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
- 2N5630
- Api Electronics, Inc.
- Short form transistor data
- 2N5630
- Central Semiconductor
- COMPLEMENTARY SILICON POWER TRANSISTOR
- 2N5630
- Diode Transistor Co., Inc.
- Silicon Transistors
- 2N5630
- Fairchild Semiconductor
- Full Line Condensed Catalogue 1977
- 2N5630
- Motorola / Freescale Semiconductor
- Collector-emitter/base voltage: 120Vdc 16 Amp high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200
- 2N5630
- General Electric Solid State
- Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20/80 / fT(Hz)=1M / Pwr(W)=200
- 2N5630
- Microsemi Corp.
- 16 A, 120 V, NPN, Si, POWER TRANSISTOR
- 2N5630
- Ppc Products Corporation
- Transistor Selection Guide including JAN / JANTX / JANTXV
Product Details Search Results:
Americanmicrosemi.com/2N5630
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"FORMERLY TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"120 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"1 MHz","Collector Current-Max (IC)":"16 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Termina...
1246 Bytes - 06:48:12, 23 December 2024
Apitech.com/2N5630
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"120 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"16 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...
1161 Bytes - 06:48:12, 23 December 2024
Microsemi.com/2N5630
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"METAL CAN-2","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"200 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"120 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"16 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Transistor Type":"GENERAL PURPOSE POWER","Number of Terminals":"...
1172 Bytes - 06:48:12, 23 December 2024
N_a/2N5630
{"Category":"NPN Transistor, Transistor","Amps":"16A","MHz":">1 MHz","Volts":"120V"}...
516 Bytes - 06:48:12, 23 December 2024
Semelab.co.uk/2N5630.MOD
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"120 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"1 MHz","Collector Current-Max (IC)":"16 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Typ...
1275 Bytes - 06:48:12, 23 December 2024
Documentation and Support
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