Datasheet.Directory

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3100 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"4 dB","Drain Current-Max (ID)":"0.0200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"25 V","Transistor Applica...