Product Datasheet Search Results:

2N5416JTXV.pdf2 Pages, 24 KB, Original
2N5416JTXV
New England Semiconductor
PNP SILICON LOW-POWER TRANSISTOR

Product Details Search Results:

Microsemi.com/2N5416JANTX
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Collector-Emitter Voltage":"300(V)","Mounting":"Through Hole","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.75(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Packaging":"Bag","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements"...
1519 Bytes - 22:55:14, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
SPW32N50C3.pdf0.811Request
SPD02N50C3.pdf0.611Request
SPP12N50C3.pdf0.631Request
SPI12N50C3.pdf0.631Request
SPW52N50C3.pdf0.601Request
SPB12N50C3.pdf0.501Request
SPA12N50C3.pdf0.631Request
SPW12N50C3.pdf0.751Request
VEX3122-02N5DZ-F.pdf3.231Request
CKZ2N50-90DP-AA011XXXXX.pdf1.401Request
LEMB25UT-400-S52N5.pdf12.281Request
CKZ2N50-45DT-CA006CA006.pdf1.401Request