Product Datasheet Search Results:
3 Pages, 297 KB, Original- 2N5369
- Central Semiconductor
- NPN Epoxy - Switching and General Purpose Transistors
1 Pages, 72 KB, Scan- 2N5369
- Micro Electronics Corporation
- 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
3 Pages, 52 KB, Original- 2N5369RLRA
- On Semiconductor L.l.c.
- 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA
3 Pages, 52 KB, Original- 2N5369RLRAG
- On Semiconductor L.l.c.
- 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA
1 Pages, 119 KB, Scan- 2N5369
- Semiconductors, Inc.
- Medium Power Amplifiers and Switches
Product Details Search Results:
Microelectr.com.hk/2N5369
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND"...
1295 Bytes - 20:50:04, 11 December 2024
N_a/2N5369
{"Category":"NPN Transistor, Transistor","Amps":"0.5A","MHz":"<1 MHz","Volts":"60V"}...
516 Bytes - 20:50:04, 11 December 2024
Onsemi.com/2N5369RLRA
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"CASE 29-11, TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3100 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"60 ohm","Feedback Cap-Max (Crss)":"4 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","T...
1400 Bytes - 20:50:04, 11 December 2024
Onsemi.com/2N5369RLRAG
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3100 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"60 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"30 V","Transistor Application":"SWITCHING"...
1461 Bytes - 20:50:04, 11 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 4N5369.pdf | 0.07 | 1 | Request |
