Datasheet.Directory

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"6.0p","V(GS)off Max. (V)":"4.0","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"25p","I(DSS) Min. (A)":"7.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"4.0m"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SEPARATE, 2 ELEMENTS","Number of Terminals":"6","Number of Elements":"2"}...

{"Breakdown Voltage Vbr:":"-50 V","Gate-Source Cutoff Voltage Vgs(off) Max:":"-4 V","Zero Gate Voltage Drain Current Idss Min:":"700 \u00b5A","Transistor Type:":"JFET","MSL:":"MSL 1 - Unlimited","No. of Pins:":"6","Power Dissipation Pd:":"500 mW","Transistor Case Style:":"TO-71","Zero Gate Voltage Drain Current Idss Max:":"7 mA","Operating Temperature Max:":"150 \u00b0C","Operating Temperature Min:":"-55 \u00b0C","SVHC:":"To Be Advised"}...