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2N3996JTXV.pdf2 Pages, 213 KB, Original
2N3996JTXV.pdf2 Pages, 25 KB, Original
2N3996JTXV
New England Semiconductor
NPN POWER SWITCHING SILICON TRANSISTOR

Product Details Search Results:

Semicoa.com/2N3996J
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1237 Bytes - 03:26:05, 06 January 2025
Semicoa.com/2N3996JV
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1241 Bytes - 03:26:05, 06 January 2025
Semicoa.com/2N3996JX
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1242 Bytes - 03:26:05, 06 January 2025

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