Datasheet.Directory

{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"5.0n","Absolute Max. Power Diss. (W)":"400m","Package":"TO-18","h(FE) Max. Current gain.":"200","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"1.2M","V(BR)CEO (V)":"12","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"20","Military":"Y","Mil Number":"JAN2N3960"}...

{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"5.0n","Absolute Max. Power Diss. (W)":"400m","Package":"TO-18","h(FE) Max. Current gain.":"200","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"1.2M","V(BR)CEO (V)":"12","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"20","Military":"Y","Mil Number":"JANTX2N3960"}...

{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"5.0n","Absolute Max. Power Diss. (W)":"400m","Package":"TO-18","h(FE) Max. Current gain.":"200","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"1.2M","V(BR)CEO (V)":"12","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"20","Military":"Y","Mil Number":"JANTXV2N3960"}...

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals...

{"Transistor Polarity":"NPN","Operating Temperature Classification":"Military","Mounting":"Through Hole","Emitter-Base Voltage":"4.5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Power Dissipation":"0.4(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-18","Collector-Base Voltage":"20(V)","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Trans...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transisto...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","C...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N4xxx","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 3mA, 30mA","Series":"Military, MIL-PRF-19500/399","Package / Case":"TO-206AA, TO-18-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"12V","Power - Max":"400mW","Packaging":"Bulk","Datasheets":"2N3960","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)",...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transisto...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"12 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","C...