Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-5, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"GERMANIUM","Transition Frequency-Nom (fT)":"4.5 MHz","Collector Current-Max (IC)":"0.2000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SM...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"TO-71, 8 PIN","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Channel Type":"N-CHANNEL","Number of Terminals":"8"}...

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-5, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"25","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"GERMANIUM","Transition Frequency-Nom (fT)":"3 MHz","Collector Current-Max (IC)":"0.2000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminal...

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"5.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"5.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"5.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"5.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"5.0m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.0m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-5, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"GERMANIUM","Transition Frequency-Nom (fT)":"4.5 MHz","Collector Current-Max (IC)":"0.2000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Number of Elements":"1","Transistor Type":"GENERAL PURPOSE SM...

{"Mounting Style":"Through Hole","Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Forward Transconductance - Min":"1000 uS","Brand":"InterFET","Id - Continuous Drain Current":"200 uA","Pd - Power Dissipation":"250 mW","Packaging":"Reel","Product Category":"JFET","Technology":"Si","Package \/ Case":"TO-71-3","Drain-Source Current at Vgs=0":"5 mA","Vgs - Gate-Source Breakdown Voltage":"- 50 V","Part # Aliases":"IFN3954","Configuration":"Dual","Gate-Source Cutoff Voltage":"- 4.5...

{"Mounting Style":"Through Hole","Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Forward Transconductance - Min":"1000 uS","Brand":"InterFET","Id - Continuous Drain Current":"200 uA","Pd - Power Dissipation":"250 mW","Packaging":"Reel","Product Category":"JFET","Technology":"Si","Package \/ Case":"TO-71-3","Drain-Source Current at Vgs=0":"5 mA","Vgs - Gate-Source Breakdown Voltage":"- 50 V","Part # Aliases":"IFN3958","Configuration":"Dual","Gate-Source Cutoff Voltage":"- 4.5...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Operating Temperature-Max":"125 Cel","Operating Temperature-Min":"-55 Cel","Terminal Shape":"J BEND","Multilayer":"Yes","Mounting Feature":"SURFACE MOUNT","Negative Tolerance":"5 %","Temperature Coefficient":"30ppm\/Cel","Capacitance":"3.9 uF","Capacitor Type":"CERAMIC","Manufacturer Series":"P","Rated DC Voltage (URdc)":"100 V","Package Shape":"RECTANGULAR PACKAGE","Positive Tolerance":"5 %","Temperature Characteristics Code":"C0G"}...