Datasheet.Directory

{"@I(C) (A) (Test Condition)":"150m","Number of Devices":"2","Type (NPN/PNP)":"NPN","Package":"TO-89","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"350m","V(BR)CEO (V)":"40","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTX2N3838"}...

{"@I(C) (A) (Test Condition)":"150m","Number of Devices":"2","Type (NPN/PNP)":"NPN","Package":"TO-89","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"350m","V(BR)CEO (V)":"40","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTXV2N3838"}...

{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...

{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Transistor Type":"NPN, PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"6-Flatpack","Packaging":"Bulk","Datasheets":"2N3838","Power - Max":"350mW","Package / Case":"6-FlatPack","...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FLATPAK-6","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"IN-LINE","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"DUAL","Transistor Polarity":"NPN AND PNP","P...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FLATPAK-6","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"IN-LINE","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"DUAL","Transistor Polarity":"NPN AND PNP","P...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FLATPAK-6","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"IN-LINE","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"DUAL","Transistor Polarity":"NPN AND PNP","P...

{"Category":"NPN Transistor, Transistor","Amps":"0.6A","MHz":">200 MHz","Volts":"60V"}...

{"@I(C) (A) (Test Condition)":"150m","Number of Devices":"2","Type (NPN/PNP)":"B","Package":"TO-78","f(T) Min. (Hz) Transition Freq":"200M","P(D) Max.(W) Power Dissipation":"350m","V(BR)CEO (V)":"40","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"100","Military":"N","I(C) Abs.(A) Collector Current":"600m"}...