Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-72, 4 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Transistor Element Material":"SILICON","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"3 pF","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-72, 4 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Transistor Element Material":"SILICON","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"3 pF","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-72, 4 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Transistor Element Material":"SILICON","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"3 pF","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"3 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transi...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"6.0p","V(GS)off Max. (V)":"4.0","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.5m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.5m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"4.5m"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Drain Current-Max (ID)":"0.0100 A","Feedback Cap-Max (Crss)":"3 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"TO-72, CASE 20-03, 4 PIN","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Feedback Cap-Max (Crss)":"3 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","DS Brea...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"6.0p","Mil Number":"JAN2N3821","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.5m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.5m","V(GS)off Max. (V)":"4.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"4.5m"}...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"6.0p","Mil Number":"JANS2N3821","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.5m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.5m","V(GS)off Max. (V)":"4.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"4.5m"}...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"6.0p","Mil Number":"JANTX2N3821","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.5m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.5m","V(GS)off Max. (V)":"4.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"4.5m"}...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"6.0p","Mil Number":"JANTXV2N3821","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.5m","V(BR)DSS (V)":"50","V(BR)GSS (V)":"50","g(fs) Min. (S) Trans. conduct.":"1.5m","V(GS)off Max. (V)":"4.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"4.5m"}...

{"Vds - Drain-Source Breakdown Voltage":"15 V","Transistor Polarity":"N-Channel","Gate-Source Cutoff Voltage":"- 4 V","Forward Transconductance - Min":"1500 uS","Brand":"InterFET","Id - Continuous Drain Current":"400 uA","Pd - Power Dissipation":"300 mW","Mounting Style":"Through Hole","Product Category":"JFET","Package / Case":"TO-72-3","Drain-Source Current at Vgs=0":"2.5 mA","Vgs - Gate-Source Breakdown Voltage":"- 50 V","Configuration":"Single","Technology":"Si","RoHS":"Details","Manufacturer":"InterFET...