Product Datasheet Search Results:

2N3700UB.pdf6 Pages, 154 KB, Original
2N3700UB
Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
GRP-DATA-JANTXV2N3700UB.pdf7 Pages, 433 KB, Original
GRP-DATA-JANTXV2N3700UB
Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
JANS2N3700UB.pdf6 Pages, 154 KB, Original
JANS2N3700UB
Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
JANTX2N3700UB.pdf7 Pages, 433 KB, Original
JANTX2N3700UB
Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
JANTXV2N3700UB.pdf7 Pages, 433 KB, Original
JANTXV2N3700UB
Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
2N3700UB.pdf7 Pages, 433 KB, Original
2N3700UB
Microsemi Corp.
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N3700UBJAN.pdf2 Pages, 53 KB, Original
2N3700UBJAN
New England Semiconductor
LOW POWER NPN SILICON TRANSISTOR
2N3700UBJANS.pdf2 Pages, 53 KB, Original
2N3700UBJANS
New England Semiconductor
LOW POWER NPN SILICON TRANSISTOR

Product Details Search Results:

Microchip.com/2N3700UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Packaging":"Waffle","Power Dissipation":"0.5(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1454 Bytes - 14:42:28, 13 November 2024
Microchip.com/GRP-DATA-JANTXV2N3700UB
1117 Bytes - 14:42:28, 13 November 2024
Microchip.com/JANS2N3700UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Packaging":"Waffle","Power Dissipation":"0.5(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1490 Bytes - 14:42:28, 13 November 2024
Microchip.com/JANTX2N3700UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Packaging":"Waffle","Power Dissipation":"0.5(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1485 Bytes - 14:42:28, 13 November 2024
Microchip.com/JANTXV2N3700UB
1081 Bytes - 14:42:28, 13 November 2024
Microsemi.com/2N3700UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"500mV @ 50mA, 500mA","Series":"-","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"80V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N3700UB","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Supplier Device Package":"UB","Standard Package":"1","Mounting T...
1455 Bytes - 14:42:28, 13 November 2024
Microsemi.com/2N3700UBJANTX
{"Collector Current (DC) ":"1 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"80 V","Mounting":"Surface Mount","Emitter-Base Voltage":"7 V","Category ":"Bipolar Power","DC Current Gain (Min)":"100","Operating Temperature Classification":"Military","Power Dissipation":"0.5 W","Operating Temp Range":"-65C to 200C","Package Type":"UB","Collector-Base Voltage":"140 V","Rad Hardened":"No","DC Current Gain":"100","Pin Count":"3","Number of Elements":"1"}...
1505 Bytes - 14:42:28, 13 November 2024
Microsemi.com/GRP-DATA-JANTXV2N3700UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Power Dissipation":"0.5(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Waffle","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1562 Bytes - 14:42:28, 13 November 2024
Microsemi.com/JAN2N3700UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"500mV @ 50mA, 500mA","Series":"Military, MIL-PRF-19500/391","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"80V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N3700UB","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Supplier Device Package":"3-UB (2.9x2....
1490 Bytes - 14:42:28, 13 November 2024
Microsemi.com/JANJ2N3700UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"50","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor Type":"GENE...
1268 Bytes - 14:42:28, 13 November 2024
Microsemi.com/JANS2N3700UB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"100","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"N...
1369 Bytes - 14:42:28, 13 November 2024
Microsemi.com/JANS2N3700UBR
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Power Dissipation":"0.5(W)","Category ":"Bipolar Power","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"CASE UB","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Mounting":"Surface Mount","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1501 Bytes - 14:42:28, 13 November 2024

Documentation and Support

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ECEA1EN100UB.pdf0.741Request
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