Product Datasheet Search Results:
1 Pages, 243 KB, Scan- 2N3637UB
- Crystalonics
- 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR
5 Pages, 170 KB, Original- GRP-DATA-JANS2N3637UB
- Microchip Technology
- Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle
5 Pages, 170 KB, Original- JANS2N3637UBR
- Microchip Technology
- Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB
5 Pages, 170 KB, Original- JANTXV2N3637UB
- Microchip Technology
- Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle
5 Pages, 170 KB, Original- 2N3637UB
- Microsemi Corp.
- 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR
5 Pages, 170 KB, Original- 2N3637UBJANTX
- Microsemi
- Trans GP BJT PNP 175V 1A 3-Pin UB
Product Details Search Results:
Crystalonics.com/2N3637UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"90","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"175 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"SQUARE...
1313 Bytes - 07:18:06, 22 November 2024
Microchip.com/2N3637UB
709 Bytes - 07:18:06, 22 November 2024
Microchip.com/GRP-DATA-JANS2N3637UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Waffle","Power Dissipation":"1(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1534 Bytes - 07:18:06, 22 November 2024
Microchip.com/JANS2N3637UBR
1077 Bytes - 07:18:06, 22 November 2024
Microchip.com/JANTXV2N3637UB
1065 Bytes - 07:18:06, 22 November 2024
Microsemi.com/2N3637UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Online Catalog":"PNP Transistors","Frequency - Transition":"-","Transistor Type":"PNP","Product Photos":"2N3637UB","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 50mA","Series":"-","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"175V","Power - Max":"1W","Packaging":"Bulk","Datasheets":"2N3634-37(L,UB)","Current - Collector Cutoff (Max)":"10\u00b5A","Suppl...
1736 Bytes - 07:18:06, 22 November 2024
Microsemi.com/2N3637UBJANTX
{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Power Dissipation":"1 W","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Collector-Emitter Voltage":"175 V","Rad Hardened":"No","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"UB","Collector-Base Voltage":"175 V","DC Current Gain":"55","Pin Count":"3"}...
1413 Bytes - 07:18:06, 22 November 2024
Microsemi.com/GRP-DATA-JANS2N3637UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Power Dissipation":"1(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Waffle","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"CASE UB","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1544 Bytes - 07:18:06, 22 November 2024
Microsemi.com/JAN2N3637UB
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"1 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"650 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"200 ns","Collector-emitter Voltage-Max":"175 V","Transistor Application":"S...
1431 Bytes - 07:18:06, 22 November 2024
Microsemi.com/JANS2N3637UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 50mA","Series":"Military, MIL-PRF-19500/357","Package / Case":"*","Voltage - Collector Emitter Breakdown (Max)":"175V","Power - Max":"1.5W","Packaging":"*","Datasheets":"2N3634(L,UB) - 3637(L,UB)","Current - Collector Cutoff (Max)":"10\u00b5A","Supplier Device Package":"*","Standard Package...
1464 Bytes - 07:18:06, 22 November 2024
Microsemi.com/JANS2N3637UBR
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Power Dissipation":"1(W)","Category ":"Bipolar Power","Operating Temp Range":"-65C to 200C","Package Type":"CASE UB","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1501 Bytes - 07:18:06, 22 November 2024
Microsemi.com/JANSD2N3637UB
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","Terminal Position":"DUAL","Package Shape":"RECTANGULAR","Number of Terminals":"3","Surface Mount":"Yes"}...
951 Bytes - 07:18:06, 22 November 2024
