Product Datasheet Search Results:
- 2N3467LEADFREE
- Central Semiconductor Corp.
- 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N3467LJAN
- New England Semiconductor
- PNP SILICON SWITCHING TRANSISTOR
- 2N3467LJANTX
- New England Semiconductor
- PNP SILICON SWITCHING TRANSISTOR
- 2N3467LJANTXV
- New England Semiconductor
- PNP SILICON SWITCHING TRANSISTOR
- JAN2N3467L
- Microsemi Corp.
- 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
Product Details Search Results:
Centralsemi.com/2N3467LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Turn-off Time-Max (toff)":"90 ns","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"40 ns","Collector-emitter Voltage-Max":"40 V","Transition ...
1508 Bytes - 05:45:50, 14 December 2024
Dla.mil/2N3467L+JAN
{"t(s) Max. (s) Storage time.":"60n","V(CE)sat Max.(V)":".6","Absolute Max. Power Diss. (W)":"1.0","t(on) Max. (s) Turn-On Time":"40n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"40","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"90n","@V(CBO) (V) (Test Condition)":"30","I(CBO) Max. (A)":"100n","@Freq. (Hz) (Test Condition)":"1M","Package":"TO-5","f(T) Min. (Hz) Transition Freq":"175M","@V(CE) (V) (Test Co...
1296 Bytes - 05:45:50, 14 December 2024
Dla.mil/2N3467L+JANTX
{"t(s) Max. (s) Storage time.":"60n","V(CE)sat Max.(V)":".6","Absolute Max. Power Diss. (W)":"1.0","t(on) Max. (s) Turn-On Time":"40n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"40","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"90n","@V(CBO) (V) (Test Condition)":"30","I(CBO) Max. (A)":"100n","@Freq. (Hz) (Test Condition)":"1M","Package":"TO-5","f(T) Min. (Hz) Transition Freq":"175M","@V(CE) (V) (Test Co...
1308 Bytes - 05:45:50, 14 December 2024
Dla.mil/2N3467L+JANTXV
{"t(s) Max. (s) Storage time.":"60n","V(CE)sat Max.(V)":".6","Absolute Max. Power Diss. (W)":"1.0","t(on) Max. (s) Turn-On Time":"40n","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"40","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"90n","@V(CBO) (V) (Test Condition)":"30","I(CBO) Max. (A)":"100n","@Freq. (Hz) (Test Condition)":"1M","Package":"TO-5","f(T) Min. (Hz) Transition Freq":"175M","@V(CE) (V) (Test Co...
1314 Bytes - 05:45:50, 14 December 2024
Microsemi.com/2N3467L
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"40","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"40 ns","Turn-off Time-Max (toff)":"90 ns","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"175 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position"...
1348 Bytes - 05:45:50, 14 December 2024
Microsemi.com/JAN2N3467L
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.2V @ 100mA, 1A","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"Military, MIL-PRF-19500/348","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-5","Packaging":"Bulk","Power - Max":"1W","Package / Case":"TO-205AA, TO-5-3 Metal Can","Moun...
1372 Bytes - 05:45:50, 14 December 2024
Microsemi.com/JANTX2N3467L
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"90 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"40 ns","Collector-emitter Voltage-Max":"40 V","Transition Frequency-Nom (fT)":"175 MHz","Transistor Applicati...
1458 Bytes - 05:45:50, 14 December 2024
Microsemi.com/JANTXV2N3467L
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"90 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"40 ns","Collector-emitter Voltage-Max":"40 V","Transition Frequency-Nom (fT)":"175 MHz","Transistor Applicati...
1459 Bytes - 05:45:50, 14 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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ERNT-1JR32N34N.pdf | 28.21 | 1 | Request | |
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7B36E402N342G1.pdf | 0.04 | 1 | Request | |
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7B35J302N347G2.pdf | 0.07 | 1 | Request |