Product Datasheet Search Results:
1 Pages, 18 KB, Original- 2N3375
- Advanced Semiconductor, Inc.
- UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
1 Pages, 6 KB, Original- 2N3375
- American Microsemiconductor, Inc.
- Si, RF POWER TRANSISTOR, TO-106
2 Pages, 211 KB, Scan- 2N3375
- Thomson-csf
- Shortform Semiconductor Catalogue 1982
1 Pages, 31 KB, Original- 2N3375
- Bharat Electronics Ltd
- UHF / VHF RF Transistors
1 Pages, 15 KB, Scan- 2N3375
- Ferranti Semiconductors
- RF Diodes and Transistors 1977
6 Pages, 318 KB, Original- 2N3375
- Motorola / Freescale Semiconductor
- Power Transistor Selection Guide
1 Pages, 66 KB, Scan- 2N3375
- Itt Semiconductors
- Semiconductor Summary 1969
5 Pages, 609 KB, Scan- 2N3375
- Microsemi Corp.
- UHF BAND, Si, NPN, RF POWER TRANSISTOR
Product Details Search Results:
Advancedsemiconductor.com/2N3375
{"Status":"ACTIVE","Collector-base Capacitance-Max":"10 pF","Package Body Material":"METAL","Mfr Package Description":"ISOLATED TO-60, 3 PIN","Terminal Form":"PIN\/PEG","Package Style":"POST\/STUD MOUNT","Collector-emitter Voltage-Max":"40 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"500 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"1.5 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Tr...
1366 Bytes - 04:05:58, 22 September 2024
Americanmicrosemi.com/2N3375
{"Status":"ACTIVE","Transistor Type":"RF POWER","Transistor Element Material":"SILICON"}...
783 Bytes - 04:05:58, 22 September 2024
Dla.mil/2N3375+JAN
{"Absolute Max. Power Diss. (W)":"11.6","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.5","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-210AB","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JAN2N3375","@I(C) (A) (Test Condition)":"150m","Power Gain Min. (dB)":"8.7","Semiconductor Materia...
1079 Bytes - 04:05:58, 22 September 2024
Dla.mil/2N3375+JANTX
{"Absolute Max. Power Diss. (W)":"11.6","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.5","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-210AB","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTX2N3375","@I(C) (A) (Test Condition)":"150m","Power Gain Min. (dB)":"8.7","Semiconductor Mater...
1092 Bytes - 04:05:58, 22 September 2024
Dla.mil/2N3375+JANTXV
{"Absolute Max. Power Diss. (W)":"11.6","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.5","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-210AB","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTXV2N3375","@I(C) (A) (Test Condition)":"150m","Power Gain Min. (dB)":"8.7","Semiconductor Mate...
1098 Bytes - 04:05:58, 22 September 2024
Microsemi.com/2N3375
{"Status":"ACTIVE","Collector-base Capacitance-Max":"10 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"M137, 3 PIN","Terminal Form":"PIN\/PEG","Package Style":"POST\/STUD MOUNT","Collector-emitter Voltage-Max":"40 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"1.5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Co...
1270 Bytes - 04:05:58, 22 September 2024
N_a/2N3375
{"Category":"NPN Transistor, Transistor","Amps":"1.5A","MHz":"400 MHz","Volts":"65V"}...
513 Bytes - 04:05:58, 22 September 2024
