Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Feedback Cap-Max (Crss)":"1.5 pF","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...

{"C(iss) Max. (F)":"15p","Absolute Max. Power Diss. (W)":"350m","g(fs) Max, (S) Trans. conduct,":"2.5m","@V(GS) (V) (Test Condition)":"30","@V(DS) (V) (Test Condition)":"30","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"50","@I(D) (A) (Test Condition)":"500p","Package":"TO-18","I(DSS) Min. (A)":"2.0m","Military":"N","V(GS)off Max. (V)":"10","I(G) Max. (A)":"100m","I(DSS) Max. (A)":"10m","g(fs) Min. (S) Trans. conduct.":"1.0m","I(D) Abs. Drain Current (A)":"10m"}...

{"C(iss) Max. (F)":"15p","Absolute Max. Power Diss. (W)":"350m","g(fs) Max, (S) Trans. conduct,":"2.5m","@V(GS) (V) (Test Condition)":"30","@V(DS) (V) (Test Condition)":"30","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"50","@I(D) (A) (Test Condition)":"500p","Package":"TO-18","I(DSS) Min. (A)":"2.0m","Military":"N","V(GS)off Max. (V)":"10","I(G) Max. (A)":"100m","I(DSS) Max. (A)":"10m","g(fs) Min. (S) Trans. conduct.":"1.0m","I(D) Abs. Drain Current (A)":"10m"}...