Product Datasheet Search Results:
5 Pages, 295 KB, Scan- 2N2880
- Api Electronics Group
- 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
1 Pages, 149 KB, Original- 2N2880
- Api Electronics, Inc.
- 5 Amp NPN-PNP Pigro Silicon Planar Power Transistors, TO-111
2 Pages, 210 KB, Original- 2N2880JAN
- Api Electronics, Inc.
- Short form transistor data
2 Pages, 210 KB, Original- 2N2880JTX
- Api Electronics, Inc.
- Short form transistor data
2 Pages, 210 KB, Original- 2N2880JTXV
- Api Electronics, Inc.
- Short form transistor data
2 Pages, 210 KB, Original- JTX2N2880
- Api Electronics, Inc.
- 5 Amp NPN Transistors
2 Pages, 210 KB, Original- JTXV2N2880
- Api Electronics, Inc.
- 5 Amp NPN Transistors
1 Pages, 63 KB, Original- 2N2880
- Diode Transistor Co., Inc.
- Transistor Short Form Data
Product Details Search Results:
Apitech.com/2N2880
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"5 A","Case Connection":"COLLECTOR","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE"...
1236 Bytes - 13:18:54, 15 November 2024
Dla.mil/2N2880+JAN
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-210AA","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N2880","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
995 Bytes - 13:18:54, 15 November 2024
Dla.mil/2N2880+JANS
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-210AA","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANS2N2880","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1001 Bytes - 13:18:54, 15 November 2024
Dla.mil/2N2880+JANTX
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-210AA","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N2880","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1007 Bytes - 13:18:54, 15 November 2024
Dla.mil/2N2880+JANTXV
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-210AA","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N2880","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1013 Bytes - 13:18:54, 15 November 2024
Microsemi.com/2N2880
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of...
1189 Bytes - 13:18:54, 15 November 2024
Microsemi.com/JAN2N2880
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"...
1339 Bytes - 13:18:54, 15 November 2024
Microsemi.com/JANS2N2880
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND",...
1316 Bytes - 13:18:54, 15 November 2024
Microsemi.com/JANTX2N2880
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package...
1296 Bytes - 13:18:54, 15 November 2024
Microsemi.com/JANTXV2N2880
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package...
1302 Bytes - 13:18:54, 15 November 2024
Microsemi.com/JTX2N2880
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND",...
1310 Bytes - 13:18:54, 15 November 2024
N_a/2N2880
{"Category":"NPN Transistor, Transistor","Amps":"5A","MHz":">50 MHz","Volts":"100V"}...
515 Bytes - 13:18:54, 15 November 2024
