SKM 195GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT ) - *+ , $ - /+0 , $23 *+,! & /*00 *+ , **0 % 10 , /"0 % 400 % 6 *0 5) SEMITRANS(R) 2 SKM 195GB126D - /*+ , /0 : $; - /+0 , *+ , /<0 % 10 , //+ % $;23 $;23 *#$; *00 % $;)3 /0 7 = - /+0 , >00 % *+ , /<0 % 10 , //+ % *00 % >00 % *00 % - ?@0 === A/+0 , ?@0 === A/*+ , @000 Freewheeling Diode SKM 195GAL126D Features "00 7 5 8 *0 7 ) 9 /*00 Inverse Diode Trench IGBT Modules " # $ ! Typical Applications* % & '() & $; - $;23 $;23 *#$; $;)3 /+0 , /0 7 = - /+0 , Module $23) %! / = Characteristics Symbol Conditions IGBT 5 $) 5 ! $ 5 0 ! 5 ) 0 $ /+0 %! 5 *+! 5 5 25 - & & 25 *B 2 1 -? $5G Units + +!1 "!+ 0!/ 0!4 % *+ , / /!* /*+ , 0!> /!/ - *+, @!< "!4 B - /*+, <!4 > B /!< *!/+ * *!@+ *+, /*+, = = / 3C , *B max. - ?1 ===A*0 25 typ. - D5 min. *+ , /+ - 0 *+,! & - " % 0 GB Units $23 *#$ Values "00 $ /+0% - /*+ , 5 6 /+ /0!+ 0!> ; ; 0!1 ; /410 + E *10 +0 /" +"0 <0 F *@!+ F 0!/" HIJ GAL 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON SKM 195GB126D ... Characteristics Symbol Conditions Inverse Diode ; $; min. /00 %7 5 0 ;0 ; (R) SEMITRANS 2 Trench IGBT Modules $223 D $; /+0 % &I& **00 %I: 5 2 $; /00 %7 5 0 ; ! Typical Applications* % & '() & /*+ , - *+ , - /*+ , - *+ , - /*+ , - /*+ , Units * *!+ /!1 = /!/ /!* > /4 B B 1" /< % : +!1 F 0!4* HIJ *!+ Freewheeling diode SKM 195GAL126D " # $ - = "00 ;0 Features *+ , max. && -? K ; SKM 195GB126D ?/+ 7 - typ. $223 D $; /+0 % &I& **00 %I: 5 2 && -? ;K ?/+ 7 - *+ , - /*+ , - *+ , - /*+ , - *+ , - /*+ , - /*+ , * = /!1 = /!/ /!* > /4 1" /< "00 % : +!1 F 0!4* HIJ Module L 2MAM 2 ? 40 =! ? *+ , 0!<+ B /*+ , / B & 0!0+ HIJ 3 N 3" 4 + O 3 3+ *!+ + O /"0 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GB 2 GAL 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON SKM 195GB126D ... (R) SEMITRANS 2 Zth Symbol Zth(j-c)l Conditions Values Units 2 2 2 2 / * 4 @ / * 4 //+ 4@ > * 0!0@>4 0!0/<@ 0!00/* NIJ NIJ NIJ NIJ @ 0!000* 2 2 2 2 / * 4 @ / * 4 *00 >0 *" @ 0!0+@ 0!001> 0!00/ NIJ NIJ NIJ NIJ @ 0!01 Zth(j-c)D Trench IGBT Modules SKM 195GB126D SKM 195GAL126D Features " # $ ! Typical Applications* % & '() & GB 3 GAL 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON SKM 195GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON SKM 195GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 5 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON SKM 195GB126D ... UL Regognized File no. E 63 532 K "/ 5G 6 K"/ 5%L K "* 01-09-2008 MAJ http://store.iiic.cc/ (c) by SEMIKRON